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S5101 DTA123YE 2E083KJ 84069 C1145HSE BUW89 BA6257 73D23
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  BYG24D - byg24j fast avalanche rectifiers prv : 200 - 600 volts io : 1.5 amperes features : * glass passivated junction * low profile package * ideal for automated placement * low reverse current * soft recovery characteristics * fast reverse recovery time * pb / rohs free mechanical data : * case : sma molded plastic * epoxy : ul94v-o rate flame retardant * polarity : color band denotes cathode end * mounting position : any * weight : 0.060 gram (approximately) maximum ratings and electrical characteristics rating at 25 c ambient temperature unless otherwise noted. symbol BYG24D byg24g byg24j unit maximum repetitive peak reverse voltage v rrm 200 400 600 v minimum breakdown voltage at i r = 100 av (br) 200 400 600 v maximum average forward current i f(av) 1.5 a peak forward surge current 10 ms single half sine wave superimposed on rated load maximum instantaneous at i f = 1 a, tj = 25 c 1.15 forward voltage (1) at i f = 1.5 a, tj = 25 c 1.25 maximum dc reverse current at v r = v rrm , tj = 25 c i r 1.0 at v r = v rrm , tj = 100 c i r(h) 10 maximum reverse recovery time( i f = 0.5a, i r = 1.0a, irr = 0.25a) trr ns typical thermal resistance, junction to case r ?jc 25 c/w maximum thermal resistance, junction to ambient (2) r ?ja 150 c/w pulse energy in avalanche mode, non repetitive (inductive load switch off) i (br)r = 1a, tj = 25 c operating junction and storage temperature range t j , t stg - 55 to + 150 c notes : (1 ) pulse tes t : 300 s pulse widt h , 1 % dut y cycle (2) mounted on epoxy-glass hard tissue 35 m * 17 mm2 cooper area per electrode. page 1 of 2 rev. 0 1 : september 18, 2008 v f v rating a i fsm 30 e r 20 mj a 140 2.3 0.2 sma 1.6 0.25 5.3 0.35 4.2 0.25 2.6 0.15 dimensions in millimeters 1 . 3 0 . 2 1.6 0.25 iatf 0060636 sgs th07/1033 tw00/17276em th97/10561qm
rating and characteristic curves ( BYG24D - byg24j ) fig.1 - average forward current fig.2 - diode capacitance vs. vs. ambient temperature reverse voltage 0 25 50 75 100 125 150 0.1 1.0 10 ambient temperature, ( c) reverse voltage, (v) fig.3 - forward current vs. fig.4 - reverse current vs. forward voltage junction temperature 0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 page 2 of 2 rev. 01 : september 18, 2008 1.2 0.9 0.6 0.3 1.5 100 20 0 25 0 15 10 5 10 1.0 1.0 10 junction temperature, (c) diode capacitance, (pf) average forward current, (a) forward current, (a) reverse current, ( a) 0.1 f = 1 mhz t j = 25 c v r = v rrm half sine wave 100 0.01 forward voltage, (v) t j = 150 c r ? ja 25 k/w v r = v rrm iatf 0060636 sgs th07/1033 tw00/17276em th97/10561qm


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